TED-AJ03-587 MODELING THE TEMPERATURE AND STRESS OF THE WAFER AROUND THE SUPPORT PIN DURING RAPID THERMAL PROCESSING

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概要

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• This work describes a finite element (FE) model to study the influence of the support pin on the wafer temperature and stress distributions during rapid thermal processing (RTP). As the feature sizes continue to decrease in microelectronics, RTP has become a key technology for single wafer processing and has been applied to silicon epitaxy, oxidation, and annealing. In an RTP furnace, the wafer is individually heated by optical radiation to temperatures as high as 1200℃ within 10 s, in contrast to the 30-min typical ramp time in batch furnaces. Figure A-1 shows a one-side lamp heating RTP furnace at the National Institute of Standards and Technology. The silicon wafer of 200-mm diameter is supported by three fused silica pins (only two are shown), and heated by an array of quartz-halogen lamps through a quartz window above the wafer, while the lower platform in maintained at room temperature by flowing water. One of the major hurdles for the application of RTP is the wafer temperature nonuniformity, which could cause slip associated with thermoplastic deformation at high processing temperatures (>1150℃). The support pins are in contact with the wafer and the pins during transient heating. Although the edge effect and pattern effect on the wafer temperature nonuniformity have been extensively studied, there does not exist detailed analysis of the pin-induced temperature and thermal stress distributions. In the present study, a finite element (FE) model was developed to simulate the transient temperature fields in a wafer being radiatively heated from one side. Temperature distributions were then used to estimate the thermal stress fields and the threshold of thermoplastic deformation in the wafer. The results show that pin-induced temperature nonuniformity can cause local thermoplastic deformation near the pin area during RTP. A large thermal contact resistance between the wafer and the tip of the pin may improve the wafer temperature uniformity significantly and reduce the thermal stress. An FE model was also developed to estimate the importance of gravity-induced stress for a 200-mm wafer and a 300-mm wafer. The result shows that gravity-induced stress is much smaller than the thermal stress calculated for the one-side heating setup. Thermal modeling and stress analysis, such as the work done in the present study, are important for RTP system design. [figure]

• 一般社団法人日本機械学会の論文

著者

• Gu L.

  Department Of Operative Dentistry And Endodontics Guanghua School Of Stomatology Sun Yatsen Universi

• Fu C.

  G. W. Woodruff School Of Mechanical Engineering Georgia Institute Of Technology

• Niess J.

  Mattson Technology

• Timans P.

  Mattson Technology

• Zhang Z.

  G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology

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