LPCVD炉の反応モデリングに関する研究 : (第1報, Poly-Si成膜速度分布シミュレーション)

概要

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A simulation has been developed for low-pressure chemical vapor deposition (LPCVD) of polysilicon thin film using a vertical multiwafer reactor. The model takes into account the empty inlet section and the spacing region between inner and outer tubes, for the purpose of determining the appropriate inlet and outlet boundary conditions. Several chemical reaction models have been proposed. The validity of these conventional chemical reaction models was verified and results were compared with out experimental data. Consequently, kinetic chemical reaction parameters were optimized for our equipment. Moreover, when the function of the optimization of injector flow rates and the locations for improving the uniformity of film growth rate was added to the simulation, its validity was shown.
一般社団法人日本機械学会の論文
1997-02-25