再結晶SiCの導電機構
スポンサーリンク
概要
- 論文の詳細を見る
The effect of sintering temperature on the electrical conductivity of recrystallized SiC was investigated. Recrystallized SiC specimens were prepared by sintering slip-cast compacts of SiC powders without any additives at 1800°-2200℃ for 1h in a nitrogen atmosphere. Temperature dependence of specific resistance was studied in the temperature range from ambient temperature to 900℃. Two types of electrical conduction mechanisms are proposed. (1) At higher temperatures, the electric current above the potential barrier due to thermal excitation is dominant. (2) At lower temperatures, the current through the potential barrier due to tunnel conduction and bulk conduction is dominant. The barrier height was affected by impurity concentration and grain boundary energy. The barrier height increased with decrease in impurity concentration or increase in grain boundary energy. When the recrystallized SiC was sintered at higher temperatures, the impurity concentration decreased and grain boundary energy decreased. As a result, the barrier height depends on the sintering temperature, and the maximum barrier height was observed at the sintering temperature of 2000°-2100℃.
- 社団法人日本セラミックス協会の論文
- 1992-10-01