再結晶SiC電気特性のシミュレーション
スポンサーリンク
概要
- 論文の詳細を見る
The height of the potential barrier originating at the grain boundaries of recrystallized SiC was experimentally controlled by varying the nitrogen pressure during sintering. The variation in electrical properties with respect to the variation of the potential barrier height was simulated using a computer. There are two conduction mechanisms for recrystallized SiC. One is thermal excitation conduction over the potential barrier and the other is tunnel conduction through the potential barrier. The WKB(Wentzel, Kramers, Brillouin)approximation was applied to calculate the number of carriers that pass through the potential barrier by the tunnel effect. The variation of electrical properties was calculated by varying the height of the potential barriers, and the result corresponded fairly well with the experimentally determined variation of these properties. This simulation method will be useful in designing the electrical properties of recrystallized SiC.
- 社団法人日本セラミックス協会の論文
- 1999-09-01