金属アルコキシドからの酸化物還元法によるInSb膜の合成

概要

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A new synthetic route based on a solution chemistry was developed for a compound semiconductor indium antimonide (InSb). Considering the moisture sensitive properties of metal alkoxides, indium antimonide was synthesized by reduction of InSbO_4, which was prepared by hydrolysis of the corresponding metal alkoxides as starting materials. InSb-alkoxide solution was prepared by two ways: one is mixed method in which In-alkoxide solution and Sb-alkoxide solution were mixed simply, and the other is continuous method using the reaction of indium chloride with Na-alkoxide in the presence of Sb-alkoxide in ethanol. Hydrolysis products by both methods were crystallized to InSbO_4 by heat-treatment at 780℃ in air. InSb was obtained by heat-treatment of hydrolysis product prepared by the continuous method at 400℃ in H_2, but it wasn't obtained from hydrolysis product prepared by the mixed method. The primary particle size of hydrolysis products was about 8 nm in diameters. The wet hydrolysis product was well mixed with ethylcellulose and terpineol by a three-roll mill to form printing paste. The paste was screen-printed on slide glass substrates, transformed to InSb film by heat treatment at 400℃ in H_2.
社団法人日本セラミックス協会の論文
2002-03-01