アルコキシド法によって得られたPTCサーミスターに対する添加物の効果

概要

論文の詳細を見る
The effect of additives on BaTiO_3-based PTC thermistor has been investigated by using metal alkoxides as a molecular precursor. Fine grain PTC thermistor was obtained via alkoxide route. In alkoxide route, the range of Y addition to obtain semiconductive BaTiO_3 was wider than that in a conventional solid state reaction route. Silicon which promotes densification and reduce the sintering temperature was added in the form of silica sol or Si alkoxide. In both cases, an addtion of Si reduced the resistivity of the Y-added BaTiO_3. Generally, Mn was added as a barrier layer modifier and enhances the PTC efect. Thus an addition of Mn increase the resistivity of thermistors. However, in the present experiments, it was observed that the addition of a small amount of Mn'lowered the resistivity. This was due to the homogeneous dispersion of a small amount of additives via alkoxide route, which can not be achieved in the conventional solid state reactions.
社団法人日本セラミックス協会の論文
1995-08-01