次世代強誘電体不揮発性メモリー : FeRAMの展望 : エピタキシャル酸化物薄膜の視点より

概要

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A new crystal engineering of oxide thin films grown epitaxially was claimed for a future ferroelectric nonvolatile memory(FeRAM)from a point of view of scaling and size effect, and its epitaxial growth technology was reviewed. A few ideal models for epitaxial oxide thin films on Si were proposed as a future oxide-FeRAM. The results are summarized as follows.(1)Bi layer-structured ferroelectric thin film with c-axis inplane orientation: This structure is not easy to made, but is an ideal model to pick up the merit of ferroelectric anisotoropy.(2)Bi layer-structured ferroelectric thin film with a planar-type, which means that electric field is applied parallel to a film surface: This idea is based on attaching a greater importance to epitaxial growth of a ferroelectric layered oxide.(3)Ferroelectric oxide artificial superlattice thin film: This is basically interesting structure from a point of view of material searching, and has a possibility to create a new function such as ferroelectric properties standing aloof from the conventional size effect.(4)Ferroelectric oxide artificial superlattice thin film with the planar-type: This film includes at least a paraelectric oxide layer, and this may create a new 2-dimensional anisotropy of ferroelectric property as a result.
社団法人日本セラミックス協会の論文
1995-11-01