反応性スパッタによるSiN薄膜の安定性

概要

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Silicon nitride (SiN) thin films prepared by reactive sputtering are one of the protective layer materials for optical disks. SiN films with low internal stress have been prepared only under restricted sputtering conditions. Chemical stability of SiN films is sensitive to the sputtering conditions, especially to total (Ar+N_2) gas pressures and to fraction of N_2. The fraction of N_2 also influences refractive indices of deposited SiN films. Sputtered SiN films with proper refractive indices and low internal stresses have been proved to have sufficient stabilities for the protective layers of the magneto-optical disks, because such SiN films showed good water proof properties against the oxidation of the magnetic layer (rare earth-transition metal alloy), of which corrosion speed is very fast.
社団法人日本セラミックス協会の論文
1992-02-01