鉄濃度の異なる半導性バナジン酸塩ガラスにおける'T_g-Δ則'

概要

論文の詳細を見る
'T_g-Δ rule', i.e., a linear relationship between the glass transition temperature(T_g)and the Mossbauer quadrupole splitting(Δ), is applied to semiconducting 10K_2O・(90-x)V_2O_5・xFe_2O_3 and 25K_2O・(75-x)V_2O_5・xFe_2O_3 glasses(henceforth denominated glass A and B, respectively). Slopes of the straight lines obtained from the plot of T_g vs.Δ(i.e., 685 and 690℃(mm・s^<-1>)^<-1>for glass A and glass B, respectively)imply that the Fe(III)atoms substitute tetrahedral V(IV)or V(V)atoms and play a role of network former. Both T_g and Δ values increase with the Fe_2O_3 content, suggesting that Fe(III)causes an increase in the distortion of VO_4 tetrahedra. Fourier-transform infrared(FT-IR) spectra prove that Fe(III)does not essentially change the network structure. These experimental results are discussed together with the 'T_g-Δ rule'that was recently applied to aluminate, gallate and borosilicate glasses.
社団法人日本セラミックス協会の論文
1999-05-01