SrRuO_3及びIrO_2薄膜上部電極を有する(111)及び(100)/(001)配向Pb(Zr,Ti)O_3薄膜キャパシタの分極反転現象
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(111) - and (100) / (001) -oriented Pb (Zr,Ti) O_3 (PZT) thin films were deposited using a chemical-solution deposition (CSD) method. For the top electrodes, IrO_2 and SrRuO_3 (SRO) thin films were deposited by sputtering. The ferroelectric properties and crystal structure of the (111)- and (100) / (001)-oriented PZT thin-film capacitors were evaluated. The switchable polarization (Qsw) of a (100) / (001) -oriented PZT capacitor with an SRO top electrode was lower than that with an IrO_2 top electrode. The opposite trend in Qsw was observed with IrO_2 and SRO top electrodes in (111)-oriented PZT capacitors. With continuous switching cycles, the Qsw of a (100) / (001) -oriented PZT capacitor with IrO_2 increased continuously with an increasing number of cycles. However, there was no increase in Qsw in a (100) / (001)-oriented PZT capacitor with SRO. Transmission electron microscopy (TEM) observation showed a local epitaxial-like interface between the SRO and PZT in both the (111) and (100) / (001) orientation. However, a heterostructure was observed in the IrO_2/PZT interface in both orientations. TEM also showed the existence of several 90° domains in the (100) / (001)-oriented PZT films. At the SRO/PZT(100)/(001) interface, this local epitaxial-like interface seemed to block the movement of the 90° domain wall. As a result, the Qsw was lower in a (100) / (001) -oriented PZT capacitor with SRO than that with IrO_2.
- 社団法人日本セラミックス協会の論文
- 2004-06-01
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- SrRuO_3及びIrO_2薄膜上部電極を有する(111)及び(100)/(001)配向Pb(Zr,Ti)O_3薄膜キャパシタの分極反転現象