The Electronic Structure of ρ-Channel Inversion Layers of Silicon (100) M.O.S: Many-Body Effects on Subbands

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概要

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• The electronic structures of the subbands of $p$-channel inversion layers of silicon are calculated by including an image potential and a many-body interaction. The effects of the image potential and the many-body interaction are as large as the typical energy separation between the subbands. Optical spectra are calculated and compared with the experiment by Kamgar et al. A quantitative agreement between the theory and the experiment is obtained. Many-body effects on the quasi-particle mass are shown to be small except in a very low surface carrier concentration, and the validity of the previous results concerning cyclotron masses obtained in the Hartree approximation is confirmed.

• 社団法人日本物理学会の論文
• 1976-07-15

著者

• Ohkawa Fusayoshi

  Department Of Physics Hokkaido University

• Ohkawa Fusayoshi

  Department Of Physics University Of Tokyo

関連論文

• Heavy Electrons in the Mott-Transition Region
• Competition between Kondo Effect and RKKY Exchange Interaction in Kondo Lattices
• Interband Effects in High-T_c Oxide Superconductors
• The Electronic Structure of ρ-Channel Inversion Layers of Silicon (100) M.O.S: Many-Body Effects on Subbands
• Positive Magnetoresistance of Kondo Lattices
• Anomalous Nuclear Magnetic Relaxation in Narrow-Band Systems
• Anisotropie Cooper Pairs in High-T_c Superconductors

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