Esaki Kink Effect in Graphite

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概要

• 論文の詳細を見る

• Current vs voltage relation was measured on graphite at high electric fields under transverse magnetic fields at about 80 K. It was shown that in low mobility specimens the kink appears when the drift velocity of carriers reaches a value which roughly coincides with the velocity of transverse vibrations in the basal plane. On the other hand, in higher mobility crystals the above kink becomes weak, while another kink turns up at higher electric fields, which give as the critical drift velocity a value approximately corresponding to the velocity of in-plane longitudinal vibrations. This dependence of the Esaki effect upon the mobility of the specimen is attributed to the presence of defects which strengthen the interaction between carriers and transverse vibrations of the lattice.

• 社団法人日本物理学会の論文
• 1975-04-15

著者

• Fujibayashi Yoshiko

  School Engineering Keio University

• Mizushima Sanchi

  School Of Engineering Keio University

関連論文

• Electric Resistivity and Hall Coefficient of Very Thin Graphite Crystals
• Study of Electron Density of States in Semimetal Graphite by Normal Tunneling
• Electronic Properties of Very Thin Graphite Crystals
• The Residual Resistivity of Thin Graphite Crystals
• Esaki Kink Effect in Graphite

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