Electronic Properties of Very Thin Graphite Crystals

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概要

• 論文の詳細を見る

• The magnetic field dependences of the Hall coefficient R and the magneto-resistance of thin graphite crystals have been measured at 77 K for film thickness ranging from 180 to 1600 Å. As the crystal thickness decreases, the magnetic field dependence of R which is negative below 10 kOe becomes weak and finally R is nearly constant for crystals of about 180 Å thickness. The magneto-resistance as a function of the field is always positive, varying approximately H^<1.3-1.6> depending upon the thickness. Using McClure's method, it is concluded that there are four kinds of carriers, the mobility values of which are nearly proportional to the thickness below 500 Å. The number of total electrons is always greater than that of holes in the whole range studied.

• 1973-04-05

著者

• Fujibayashi Yoshiko

  School Engineering Keio University

関連論文

• Electric Resistivity and Hall Coefficient of Very Thin Graphite Crystals
• Electronic Properties of Very Thin Graphite Crystals
• The Residual Resistivity of Thin Graphite Crystals
• Esaki Kink Effect in Graphite

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