Diffusion of Boron into Silicon

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概要

• 論文の詳細を見る

• The boron diffusion into silicon has been investigated over a temperature range from 1100℃ to 1300℃ in a condition of constant source. True concentration profiles of boron diffusion layers were obtained by means of activation analysis by proton irradiations and conductivity measurements in order to understand the anomaly of apparent diffusion coefficient calculated from usual p-n junction method. In the case of low surface concentration less than 6x1O^<19>/cc, the boron distributions are represented as error function complement, whereas at higher surface concentrations they show more convex distribution. The fast diffusivity in the high concentration region is attributed to the enhanced diffusion by induced lattice strain.

• 社団法人日本物理学会の論文
• 1964-03-05

著者

• MAEKAWA Shun-ichi

  Kobe Kogyo (Industories) Corp.

• Oshida Tadashi

  Kobe Kogyo Corporation

• Maekawa S.

  Kobe Kogyo Corporation,

• Maekawa S.

  Kobe Kogyo Corporation

関連論文

• γ Ray Irradiation on MOS Field Effect Transistor
• Electrical Properties of Oxidized Si P-N Junctions
• Growth and Structure of Si Oxide Films on Si Surface
• On the Dipping Counter
• Diffusion of Boron into Silicon
• Diffusion of Phosphorus into Silicon
• The Evolution of Gas from Nickel Plate

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