Diffusion of Phosphorus into Silicon

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概要

• 論文の詳細を見る

• The phosphorus diffusion into silicon under the condition of constant surface concentration has been studied by means of radiotracer technique and conductivity measurements. The anormalies of apparent diffusion coefficient calculated from usual p-n junction method could be explained by assuming the existence of an extra fast diffusion mechanism, corresponding to the distribution profile in the high impurity concentration region of a diffused layer. The activation energy of the fast diffusion was about 1.8 eV, this diffusion was considered to be an interstitial migration of unionized phosphorus. A maximum value of conductivity lies at the doped phosphorus concentration of about 5 × 10^<20>/cc. Electron mobility decreases with the increase of phosphorus concentration in the high concentration range above 5 × 10^<20>/cc.

• 社団法人日本物理学会の論文
• 1962-10-05

著者

• MAEKAWA Shun-ichi

  Kobe Kogyo (Industories) Corp.

• Maekawa Shun-ichi

  Kobe Kogyo Corporation

関連論文

• γ Ray Irradiation on MOS Field Effect Transistor
• Electrical Properties of Oxidized Si P-N Junctions
• Growth and Structure of Si Oxide Films on Si Surface
• Diffusion of Boron into Silicon
• Diffusion of Phosphorus into Silicon
• The Evolution of Gas from Nickel Plate

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