Voltage Noise of an Amorphous Mo_xSi_<1-x> Film near the Superconducting Transition in Magnetic Fields

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概要

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• The voltage noise .5y ( f ) in a thick amorphous lVIo.Si) . filrn is sttrdied over a broad freq tmencyrange spanning six decades ( f : 0.1 Hz -100 kHz) in magnetic fields ,jtrst above and below themelting field, as a function of a steady current. The origin of the low-freqtrency ( f $ 0.1 -10 Hz)noise observed near the zero-resistance region is naainly dtte to ternperattrre flucttrations andthe contribtrtion due to flux motion is very sunall. In contrast, .5y(./') at higher freqtrencies(/ Z 10 Hz -100 kHz) appears to be doraainated by the fltmx motion, These results are cozanparedwith recent experitnents on YBazCu3O7 ,5 filraas.

• 社団法人日本物理学会の論文
• 1998-03-15

著者

• Okuma Satoshi

  Research Center For Very Low Temperature System Tokyo Institute Of Technology

• KOKUBO Nobuhito

  Research Center for Very Low Temperature System,Tokyo Institute of Technology

• TERASHIMA Takahisa

  Research Center for Very Low Temperature System,Tokyo Institute of Technology

• Terashima Takahisa

  Research Center For Very Low Temperature System Tokyo Institute Of Technology

関連論文

• Dimensionality Crossover of the Nonlinear Resistance in Quench-Condensed Indium Films
• Voltage Noise of an Amorphous Mo_xSi_ Film near the Superconducting Transition in Magnetic Fields
• Evidence of the Vortex-Glass Transition in Homogeneously Disordered Thick Films of a-Mo_xSi_ : Condensed Matter: Electronic Properties, etc.

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