On the Theory of Auger Recomvination in Slightly Compensated Heavily Doped Semiconductors

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概要

• 論文の詳細を見る

• A study is given of the eifect due to the impurity correlation on Auger processes ina slightly compensated heavily doped semiconductor that is obtained by thermalpreparation. Account is taken of high-temperature ionic correlation and low tempera-Lure electronic screening as well. Contrary to the case of close compensation, the irn-purity correlation in the sample in question is generally found to be of far less irnpor-lance, reducing the Auger recombination only by about an order of magnitude infavour cases.

• 社団法人日本物理学会の論文
• 1991-11-15

著者

• Quang Doan

  Institute Of Theoretical Physics Academy Of Sciences Of Vietnam

• Quang Doan

  Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi, Vietnam

関連論文

• On the Theory of Auger Recomvination in Slightly Compensated Heavily Doped Semiconductors
• Auger Recombination in an Intentse Piezoelectric Noise Field
• Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

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