Auger Recombination in an Intentse Piezoelectric Noise Field

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概要

• 論文の詳細を見る

• A theory is developed of the Auger recombination occurring in a piezoelectricsemiconductor propagated by an intense acoustic noise flux. The calculation of theAuger coefficient is carried out within the classical approach to the piezoelectric noisefield and for the case of nondegenerate carrier statistics. Then a simple analytic expres-sion of the Auger coefficient is derived, which exhibits a linearly exponential functionof the flux intensity. The screening effect of charge carriers is shown to be of great importance. The Auger recombination is found to be strongly enhanced as compared tothat in the appropriate noiseless sample up to several orders of magnitude at large fluxintensity, low temperature and small carrier concentration. Thus this gives another example illustrating the earlier statement that the Auger transition might still be one ofthe leading recombination mechanisms for disordered systems.

• 社団法人日本物理学会の論文
• 1990-09-15

著者

• Quang Doan

  Institute Of Theoretical Physics Academy Of Sciences Of Vietnam

• Quang Doan

  Institute Of Theorical Physics Academy Of Science Of Vietnam

• Quang Doan

  Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi, Vietnam

関連論文

• On the Theory of Auger Recomvination in Slightly Compensated Heavily Doped Semiconductors
• Auger Recombination in an Intentse Piezoelectric Noise Field
• Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

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