Quenching Process of Radioluminescence in Anthracene Crystals

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概要

• 論文の詳細を見る

• Temperature dependences of /?-ray-excited radioluminescence and uv-light-excited photoluminescence were measured in anthracene crystals. They dependon crystals, but their ratio shows the same characteristic in all of the crystals. Largetemperature dependence of the ratio cannot be explained by the three relaxationprocesses of highly excited states, i.e. internal conversion and vibrational relaxation,autoionization (prei'onization) and exciton fission. It is expected by analyzing thedata that there must exist a radiationless decay with an activation energy x 0.048 eVin the relaxation manifolds. Predissociation to a geminate radical pair, which isfollowed by radiationless geminate recombination to an anthracene molecule orfission to isolated radicals, is considered as a competing process with the abovethree physical processes.

• 社団法人日本物理学会の論文
• 1985-04-15

著者

• Yokoi K

  Instrumentation Engineering Faculty Of Science And Technology Keio University

• Yokoi Kohei

  Instrumentation Engineering Faculty Of Science And Technology Keio University

• Ohba Y

  Department Of Instrumentation Engineering Faculty Of Science And Technology Keio University

• Ohba Yujiro

  Instrumentation Engineering Faculty Of Science And Technology Keio University

関連論文

• Long-Lived Luminescence in Anthracene Crystals Excited by Both β Ray and Visible Light
• Electroluminescence in Perylene-and-Tetracene-Doped Anthracene Films
• Electroluminescence in Perylene-Doped Anthracene Films : The Ambient Gas Effect in the Emission Process
• Quenching Process of Radioluminescence in Anthracene Crystals

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