Anisotropy of Auger Electron Spectra in GaSe_<1-x>S_x(0≤x≤1)

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概要

• 論文の詳細を見る

• Anisotropic emission of Auger electrons from clean surfaces of layer typesemiconductors GaSe. ,S, has been investigated in the full range of the molarfraction x (O<,v<1) with partictular attention to Se-3dVV and S-2pVV transi-Lions. The experimental results show that Auger electrons are ejected isotropicallyfrom atoms which are excited by the primary electron beam. These Auger elec-trons are subsequently diffracted by surrounding atoms before they escape fromthe surface. The observed anxular der>endence exhibits local symmetry of thesurface corresponding to each polytype in this crystal system. The experimentalresults are in good agreement with the diffraction pattern calculated on the basisof a simple kinematic model.

• 社団法人日本物理学会の論文
• 1984-11-15

著者

• NISHINA Yuichiro

  Research Institute for Iorn, Steel and Other Metals, Tohoku University

• Nishina Yuichiro

  Research Institute For Iorn Steel And Other Metals Tohoku University

• Kasuya Atsuo

  Research Institute For Iron Steel And Other Metals Tohoku University

• ITO Tadashi

  Research Institute for Iron,Steel and Other Metals,Tohoku University

• Ito Tadashi

  Research Institute For Iron Steel And Other Metals Tohoku University:research Laboratories Ashigara

• Itoh Tadashi

  Research Associate Wakayama National College Of Technology

• Nishina Yuichiro

  Research Institute for Iron,Steel and Other Metals,Tohoku University

関連論文

• Phonon Structures in Optical Spectra of Layer Compounds GaSe and GaS
• Phonon Structures in Optical Spectra of Layer Compounds GaSe and GaS
• Optical and Magneto-Optical Properties of Some Semiconductors
• Anisotropy of Auger Electron Spectra in GaSe_S_x(0≤x≤1)
• Resonant Enhancement of Stimulated Emission by Nonlinear Exciton-Phonon Interaction (Selected Topics in Semiconductor Physics) -- (High Excitation)
• The Structure and Crystallization of Amorphous Se
• Infrared Absorption and Faraday Effect in PbTe and PbSe
• Interband Faraday Effect in GaSe
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