Dependence of Threshold Acoustoelectric Amplification on Scattering Parameter in Doped Piezoelectric Semiconductors

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概要

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• Following the new formalism of Sharma and Kaw for energy dependent relaxa-lion times, we solve the Boltzmann equation to calculate the conductivity tensorand absorption coefficient when an acoustic wave propagates through a non-degenerate piezoelectric semiconductor in the presence of an external d.c. field.The mixed scattering of electrons by ionized impurity as well as by piezoelectricpotential have been taken into account. The dependence of tlu'eshold c3:rift velocity,required for amplification, on the scattering parameter v.,/v .), has been investi-gated.

• 社団法人日本物理学会の論文
• 1982-07-15

著者

• Palanichamy P.

  Electrophysics Laboratory Department Of Physics Indian Institute Of Technology

• Singh S.P.

  Electro-Physics Group, Physics Department, Indian Institute of Technology

• Sharma S.K.

  Electrophysics Laboratory,Department of Physics,Indian Institute of Technology

• Sharma S.K.

  Electro-Physics Group, Physics Department, Indian Institute of Technology

関連論文

• Attenuation and Amplification of Acoustic Waves in the Presence of DC Fields in Semiconductors with Energy-Dependent Relaxation Times
• Dependence of Threshold Acoustoelectric Amplification on Scattering Parameter in Doped Piezoelectric Semiconductors

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