Attenuation and Amplification of Acoustic Waves in the Presence of DC Fields in Semiconductors with Energy-Dependent Relaxation Times
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概要
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Using the collision model recently suggested by Sharma and Kaw for energy-dependent relaxation times, we solve the Boltzmann transport equation for the anisotropic part of the distribution function in the presence of an acoustic wave and a dc field of arbitrary strength and calculate the absorption coefficient in a nondegenerate semiconductor. The scattering of electron with acoustic phonon has been taken as the sole mechanism of scattering. The effect of the dc field on the isotropic part has been taken into account by using Yamashita and Watanabe's distribution. Our results show that for ql≪1 the values of the absorption coefficient are appreciably different from those obtained by using the well-known Cohen-Harrison-Harrison model while for ql≫1, no significant difference is observed in the values of the absorption coefficient obtained from the two models of the collision term.
- 社団法人日本物理学会の論文
- 1976-04-15
著者
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Singh S.
Electro-physics Group Physics Department Indian Institute Of Technology
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Sharma S.
Electro-physics Group Physics Department Indian Institute Of Technology
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Singh S.P.
Electro-Physics Group, Physics Department, Indian Institute of Technology
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Sharma S.K.
Electro-Physics Group, Physics Department, Indian Institute of Technology
関連論文
- Attenuation and Amplification of Acoustic Waves in the Presence of DC Fields in Semiconductors with Energy-Dependent Relaxation Times
- Dependence of Threshold Acoustoelectric Amplification on Scattering Parameter in Doped Piezoelectric Semiconductors