Electron Spin Resonance Study of Electron-Irradiated ZnS Crystals Containing Stacking Faults

概要

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Three kinds of photosensitive [SR signals (!'., V., F) have been found to beproduced by electron irradiation. Signals V. and V. (V. having g77=2.OO3O,y.=2.0550, and axial symmetry along the twinning [1113. axis; V,. having g7,2.0030, ,(.=2.053O, and axial symmetry along another (111) axis) are ascribedto Zn vacancies (V centers) situated at stacking faults ; V. is due to a hole localizedon the S ion next to the Zn vacancy along the [1113.. axis; V. is due to a holelocalized on one of the other three S ions next to the Zn vacancy. The signal F(g=2.O027 and isotropic) is ascribed to F centers. The excitation, quenching,and enhancing bands of the V centers are around 2.85 eV, 1.8 eV, and 1.3 eV,respectively. For F centers the excitation bands are around 3.4 eV and 1.8 eV,while the quenching bands are around 2.8 eV and 2.1 eV. A band model is pro-posed to interpret these photosensitivities.
社団法人日本物理学会の論文
1979-08-15