Electron Spin Resonance Study of Defects Formed in Electron-Irradiated ZnS by Room-Temperature Annealing

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概要

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• Electron spin resonance signals due to isolateai Zn vacancies decreased inintensity and new signals (,{z and /12) increased as: electron-irradiated ZnS con-taining Cl impurity was kept at room temperature. 7[he features of the new signalsare as follows: For the An simnal ttt=2.0545 and tr*=2.O264, where ttz is takenin parallel with the [111],., and for the A. signal .y.=2.0285, y.=2.0238, y3=2.0545, and r=4', where g. and g. are taken in the (ITO) plane and g3 in parallelwith another (111 ) axis. The new signals have two excitation bands, two quench-ing bands, and two enhancing bands around 3.4 and 2.9 eV, 2.9 and 1.9 eV, and1.3 and 1.0 eV, respectively, at liquid nitrogen temperature. The new signals areascribed to A centers. A band model is also given t?c explain the photosensitivity

• 社団法人日本物理学会の論文
• 1981-07-15

著者

• Shono Yoshihiko

  Radiation Center Of Osaka Prefecture

関連論文

• Electron Spin Resonance Study of Defects Formed in Electron-Irradiated ZnS by Room-Temperature Annealing
• Electron Spin Resonance Study of Electron-Irradiated ZnS Crystals Containing Stacking Faults
• Photoluminescence Induced in ZnS by Electron Irradiation

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