Uniaxial Stress Effect on Acoustic Attenuation in Sb-Doped Ge

スポンサーリンク

概要

• 論文の詳細を見る

• The acoustic attenuation in lightly Sb-doped (l?2x 10" Sb/cm') Ge wasmeasured in the temperature range from 1.4 to 4.2 K at frequency about 700MHz under uniaxial stress up to 3 x 10' dyn/cm'. It was found that the uniaxialstress changed the acoustic attenuation remarkably and the behavior dependedstrongly on the direction of the applied stress. The experimental results arecompared with the theory in which the relaxation of the system into an instantane-ous local thermal equilibrium under acoustic waves and the contribution of eachvalley to the donor wave function under uniaxial stress are considered.

• 社団法人日本物理学会の論文
• 1978-05-15

著者

• Akao Fumio

  Institute Of Scientific And Industrial Research Osaka University

• Miyasato Tatsuro

  Institute Of Scientific And Industrial Research Osaka University

• Miyasato Taturo

  Institute Of Scientific And Industrial Research Osaka University

関連論文

• Magnetic Field Dependence of Ballistic Heat-Pulse Scattering in As-Doped Ge
• Magnetic Field Dependence of Acoustic Attenuation in Uniaxially Compressed Sb Doped Ge
• Anisotropy of Ultrasonic Attenuation in Pure Syngle Crystal of Niobium
• Hypersonic Attenuation in Antimony-Doped Germanium and Its Magnetic Field Dependence
• Magnetic Field Effect on the Hypersonic Attenuation by Shallow Donors in Ge
• Hypersonic Attenuation in Sb Doped Germanium
• Ultrasonic Attenuation Measurements on Single Crystal of V_3Si near T_c
• Uniaxial Stress Effect on Acoustic Attenuation in Sb-Doped Ge
• Magnetic Field Dependence of Acoustic Attenuation in Uniaxially Compressed Sb Doped Ge

スポンサーリンク