Edge Emission of Excitons in KI and RbI
スポンサーリンク
概要
- 論文の詳細を見る
The intensity of the edge emission in Kl and Rbl has been n'measured from 5 Kto 100 K. The temperature der>endence is interrreted in terms of a simnrle excitondecay naodel. Thermal quenching of the enaission can be ascribed to the increasein the self-trapping probability of excitons. The edge emission is assumed tooriginate from a metastable free exciton state.
- 社団法人日本物理学会の論文
- 1977-05-15
著者
-
Hayashi Tetsusuke
School Of General Education Kyoto University
-
KOSHINO Shigeharu
School of General Education,Kyoto University
-
Ohata T
Kyoto Univ. Kyoto
-
Koshino S
Department Of Fundamental Sciences Faculty Of Integrated Human Studies Kyoto University
-
Koshino Shigeharu
School Of General Education Kyoto University
-
OHATA Tokiko
School of General Education,Kyoto University
関連論文
- Polarized Luminescence of (Tl^+)_2 Centers in KI
- Luminescence of Lead Ion Centers in Cadmium Iodide Single Crystals
- Luminescence of KI:Br and RbI:Br
- Decay Times of Intrinsic Luminescence in RbI
- Effects of Isoelectronic Impurities on Indirect Excitons in CdI_2:Br Mixed Crystals
- Luminescence of Free Excitons in CdI_2 : Br
- Thallous Dimer Centers in RbI
- Luminescence of (Tl^+)_2 Centers in KI
- Edge Luminescence of KI and RbI under UV Excitation
- Edge Emission of Excitons in KI and RbI
- Host-Sensitized Luminescence of KI:Tl under an Applied Electric Field