Kinetics of Domain Wall Motion in Ferroelectric Switching. : II. Application to Barium Titanate
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概要
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The general theory of wall motion in ferroelectric switching (M. Hayashi: J. Phys. Soc. Japan 33 (1972) 616) is applied to BaTiO_3. The theory successfully accounts for the absolute value as well as the field dependence of the wall velocity measured over a wide range of field. The theory also explains the field dependence of the orientation of the growing domains. It is shown on the basis ofa microscopic theory that the energy density of the side boundary of a two- or one-dimensional nucleus is smaller than that of a 180° wall.
- 社団法人日本物理学会の論文
- 1973-05-05
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関連論文
- Effect of a Two-Dimensional Pressure on the Curie Points of Triglycine Sulphate and Rochelle Salt
- Sideways Growth of Domains in Polarization Reversal in Triglycine Sulphate
- Decay of Switching Current in Switching of BaTiO_3 Crystal due to a-Domain Formation
- Effect of Pressure on the Polarization Reversal in BaTiO_3
- Kinetics of Domain Wall Motion in Ferroelectric Switching. : II. Application to Barium Titanate
- Temperature Dependence of the Switching Rate of Triglycine Sulphate
- A Note on the Domain Wall Motion in Ferroelectric Switching
- Kinetics of Domain Wall Motion in Ferroelectric Switching. : I. General Formulation
- Effect of Pressure on the Switching Rate of Triglycine Sulphate
- Ferroelectric Phase Transition in Lead Zirconate Titanate under High Pressure
- Shift of Curie Temperature of Barium Titanate Due to Two-Dimensional Pressure
- Improved Theory of the Growth of Perfect Crystals