Reorientation of Impurity-Vacancy Dipoles in Cesium Halides

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概要

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• Dielectric loss measurements of lead and cadmium doped cesium halides have been reported in the temperature range 90-180℃. One loss peak which is attributed to the jump of vacancy in the six equivalent nn positions, has been observed in the plot of tan δ versus frequency isothermals. The plot of log f_m (f_m being the peak frequency) against 1/T gives a straight line, the slope of which yields the value of activation energy for the jump of a bound cation vacancy. The activation energy thus obtained from dielectric loss date compares well with those obtained from conductivity measurements on these crystals.

• 社団法人日本物理学会の論文
• 1972-12-05

著者

• Radhakrishna S.

  Department Of Physics Indian Institute Of Technology

• Pande K.

  Department Of Physics Indian Institute Of Technology

• NARAYANAN R.

  Department of Physics, Indian Institute of Technology

• Narayanan R.

  Department Of Physics Indian Institute Of Technology

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• Reorientation of Impurity-Vacancy Dipoles in Cesium Halides
• A New Logarithmic Form for the Overlap Repulsion for Alkali Halides
• Cohesive Energies and Reststrahlen Frequencies of Some Heavier Salts
• Raman Spectrum of Pure and Impurity Doped RbCl Crystals
• Raman Spectra of Irradiated Alkali Bromate Crystals

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