Phonon Drag Thermoelectric Power in Graphite

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概要

• 論文の詳細を見る

• According to Takezawa et at., the thermoelectric power 〓 along the basal plane in a synthetic single crystal graphite exhibits a sharp negative dip at T=35°K and a positive peak centered at 120°K. Subtracting the diffusion component 〓_d by use of an appropriate assumption, they laave separated he phonon drag contribution 〓_p from 〓. To get a theoretical explanation for 〓_p, coupled Boltzmann equations for carriers and phonons are solved on the basis of a simplified ellipsoidal band model. The calculated 〓_p is proportional to T^3 above the dip temperature T_d(35°K) and at T< T_dit; it tends to zero as T^&klt;2&simt;4> with decreasing temperature. These behaviors are in qualitative agreement with the observed result.

• 社団法人日本物理学会の論文
• 1970-12-05

著者

• Sugihara Ko

  Wireless Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Sugihara Ko

  Wireless Research Laborarory Matsushita Electric Industrial Co. Ltd

関連論文

• Phonon Drag Thermoelectric Power in Graphite
• Trigonal Warping of the Bands and Hall Effect in Graphite
• Thermomagnetic Effects in Bismuth. I. : Thermoelectric Power

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