Screening and Stark Effects Due to Impurities on Excitons in Semiconductors
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It is pointed out that localized donor electrons participate dominantly in screening the electron-hole Coulomb attraction in the exciton around the donor concentration where the Mott transition is observed. The decrease in binding energies of intrinsic and bound excitons in CdS for increasing donor concentration, which was observed by Kukimoto et al. is explained by this screening effect. The peculiar feature of the asymmetric broadening with a long tail on the lower energy side in emission line shape of bound exciton is ascribed to the stark effect due to charged impurities.
- 社団法人日本物理学会の論文
- 1970-01-05
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