Electro-Absorption of CdS Crystals
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概要
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Measurements of electro-absorption of thin CdS crystals are carried out in the temperature range from 85 to 300°K around the photon energy of the fundamental absorption edge. At 300°K, the spectra show characteristics due to the Urbach-rule edge at low photon energies, while oscillatory behaviors of the spectra are observed at high photon energies. The reduced effective masses assoiated to T_9-T_7 and T_7-T_7 transitions in CdS are estimated from the dependence of the change in the absorption coefficient on the applied electric field. The spectra of the change at 85°K are concluded to consist of superposition of those related to A_1-and B_1- excitons, since the wavelengths at maximum peaks in oscillatory curves of the change of the absorption coefficient at the extrapolated zero-field are consistent to the above exciton wavelengths assigned from results of photoconductivity by Park-Reynolds.
- 社団法人日本物理学会の論文
- 1970-04-05
著者
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Hase Nobuyasu
Matsushita Research Institute Tokyo Inc.
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Onuki Masami
Matsushita Research Institute Tokyo Inc.
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HASE Nobuyasu
Matsushita Research Institute Tokyo, Inc.
関連論文
- Effective Electron Mass in CdSe
- A.C. Photoconductivity of CdS Crystals
- High-Field Photo-Hall Effect of Insulating GaAs
- Schubwegs of Photo-Carriers in CdS Crystals
- Electro-Absorption of CdS Crystals
- Electron-Absorption of CdS_Se_x Mixed Crystals
- Mobility of Electrons in Pure CdS Crystal Grown from the Melt
- Hall Mobility of Holes in CdS Crystals
- Hole Photoconductivity in CdS Crystals