Contribution of Surface Electrons to the Infrared Optical Properties of Silicon

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概要

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• The contribution of thermally agitated free elctrons which appeared to the surface of silicon to the optical properties was studied by infrared reflection measurements for heavily doped n-type silicon. In this measurement, with the increase of temperature up to 300℃, it was found that the reflectivity in wide wavelength region increases almost linearly without modification of the usual reflection profile of the heavily doped material. The experimental results and their consideration by free electron theory and dispersion theory proved that the optical properties of the free electrons which appeared from thermal agitation to the surface of crystal are entirely different from that of free electrons which occurred from dopant of impurities.

• 社団法人日本物理学会の論文
• 1969-07-05

著者

• Sato Kenzo

  Musashi Works Hitachi Ltd.

関連論文

• Infrared Lattice Vibration Spectra of Crystalline Quartz
• Reststrahl Reflection Characteristics of Amorphous Silica
• Contribution of Surface Electrons to the Infrared Optical Properties of Silicon

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