Reststrahl Reflection Characteristics of Amorphous Silica

概要

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The Reststrahl reflection characteristics in the wavelength region 1-25μ of silica films, a few thousand angstroms in thickness, have been studied. The films were grown on silicon wafers under controlled conditions. The reflection maxima in the Si-O stretching and Si-O bending bands, which are observed with crystalline quartz at 9.1 and 20.4μ respectively, are found to shift to the longer wavelength side. With the decrease in film thickness, the Reststrahl wavelengths increase and the Reststrahl intensities decrease. A tentative explanation is given of these features, assuming that there are unsaturated Si atoms, i.e. those with one, two or three dangling bonds, in a very thin layer immediately below the free surface of the film. Some observations have also been made on the influence on the Reststrahl reflection of the impurities present in the silica film and of the growth conditoons of the film.
社団法人日本物理学会の論文
1966-06-05