E-Mode Raman Spectra and Hydrogen Bonds in Paraelectric KH_2PO_4
スポンサーリンク
概要
- 論文の詳細を見る
The transverse and Hall resistivities of electrons in Si-MOS inversion layerhave been measured at ]:0.5 K in the magnetic fields f=9.0 T and 10.5 T, at thegate voltages around the transverse resistivity minima. The Hall resistivity isfound to be integral fractions of hoe" in precision better than 2 parts in 10' overthe concentration of electrons ieH/hc ranging from ] x 10" cm ' (7=4) to 3 x 10"cm=' (Z=I2).
- 社団法人日本物理学会の論文
- 1981-01-15
著者
-
Tominaga Yasunori
Department Of Physics And Chemistry Ochanomizu University
-
Tominaga Yasunori
Department Of Physics Faculty Of Science Ochanomizu University
-
Urabe Hisako
Department Of Physics Faculty Of Science Ochanomizu University
関連論文
- Magnetic Properties of CuCr_2Se_xS_
- Hydrogen and PO_4 Modes of RbH_2PO_4
- Vibrational Modes of Deuterium in KD_2PO_4
- Study of Glass Transition in K_2HPO_4Aqueous Solution by Brillouin and Raman Spectroscopy
- The First Observation of Low-Frequency Raman Spectra of Supercritical Water(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Low-Lying B_2(LO) Raman Spectra in Paraelectric KH_2PO_4
- E-Mode Raman Spectra and Hydrogen Bonds in Paraelectric KH_2PO_4
- Low Frequency Raman Spectra of DNA
- Study of the Critical Slowing Down of the Dielectric Relaxation in AgNa(NO_2)_2 by Thermal Moise Measurements
- Study of the Critical Behavior of TGS by Thermal Noise Measurements
- The B_1 and A_2 Modes of KDP/RDP Family in Low-Frequency Raman Spectra
- Dynamical Structure of Water in Aqueous Solutions of Ascorbic Acid by Low-Frequency Raman Scattering