Electrical Resistivity and Hall Effect of ZnCr_2Se_4

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概要

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• Measurements of the electrical resistivities, the Seebck effects, and the Hall effects were performed on the doped and un-doped single crystals of ZnCr_2Se_4 between 77 and 380K. The influence of heat treatments on the electrical properties are studied and the results are given. Mesurement of the Hall effects and the Seebeck effects indicate that all samples investigated are p-type. The hole mobility of these samples is small (order of 10^0 cm^2/Vsec) and indepent of temperature while hole concentrations are cosiderably affected by doping or annealing and are temperature dependent. The above results for these ZnCr_2Se_4 crystals are discussed in connection with deviation of stoichiomety in these single crystals.

• 社団法人日本物理学会の論文
• 1974-07-15

著者

• Watanabe Tsuneo

  Institute For Solid State Physics University Of Tokyo

関連論文

• Neutron Scattering Study of ZnCr_2Se_4 with Screw Spin Structure
• NO_x Removal Process in Pulsed Corona Discharge Combined with TiO _2 Photocatalyst
• Electrical Resistivity and Hall Effect of ZnCr_2Se_4
• Growth of CoCr_2S_4 and FeCr_2S_4 Single Crystals by Chemical Vapor Transport
• Anisotropy of Magnetoresistance of FeCr_2S_4 Single Crystals

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