Decay Times of Thallous Dimer Emissions in NaI (Tl)

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概要

• 論文の詳細を見る

• It was shown that the decay times of the 428 nm (excited at the A' band) and 425 nm (excited at the A band) emission bands in NaI (Tl) have different temperature dependence, which can be explained by assuming trapping states below the emission states by 0.02 eV and 0.04 eV, respectively. The decay time and intensity of the 325 nm emission band (excited at the B' band) decreases with rising temperature, which gives the spontaneous emission probability of 1.8×10^8 sec^<-1> and the thermal activation energy for non-radiative process of 0.06 eV.

• 社団法人日本物理学会の論文
• 1974-06-15

著者

• ISHIKANE Masuo

  Faculty of Education

• Ishikane Masuo

  Faculty Of Education Fukui University

関連論文

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• Intense Narrow Emission Band from the Surface of Powder of KI:Ag Crystal
• Oscillator-Amplifier System in N_2 Laser Using the Pressure-Dependent Formative Time-Lag of Discharge
• New Light Emission from the Surface of KI Crystal
• Fast Component of the A_x Emission Band in KI(Tl) and RbI(Tl)
• The Scintillation Process of NaI (Tl)
• Decay Times of Thallous Dimer Emissions in NaI (Tl)

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