Dislocations Observed in NaF Crystals. II. : Nucleation Sources on Cleavage Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
Dislocation loop families beneath the cleavage face have been studied three dimensionally by means of the electrolytic coloration. Emerge planes are {110} and (001). Dislocation at shallow levels are strongly influenced by image force, i. e. freed from the face or changed their shape. The nucleation sources of dislocation are found at structural inhomogeneities where stress concentration occurs during the cleavage and electrolysis. Simple loop families are relatively isolated from each other, while complicated ones are observed to be close together with the multiform neighborhood. The mechanisms of nucleation and complication are discussed for each dislocation loop family, from simple to complicated ones including newly found chevron patterns.
- 社団法人日本物理学会の論文
- 1971-11-05
著者
関連論文
- Identification of Dislocations in NaF Crystals by Electrolytic Coloration and Chemical Etching
- Defect Formation by N^ Ion Bombardment in LiF and NaF
- The Depth Distribution of F Center Density in Lithium Fluoride Crystal Bombarded with Electrons
- Coloration of LiF and NaF by N^+ Ion Bombardment
- Observations of Dislocation Network in Neutron-Irradiated LiF Crystal
- Colloidal Li Metal in Neutron-Irradiated LiF Crystals
- Depths of the Regions Damaged by Protons, Deuterons and α-Particles in Lithium Fluoride Single Crystal
- Radiation Effects in LiF Crystals
- Dislocations Observed in NaF Crystals. I. : Rosette Structure and Its Changes under External Stress
- Lattice Expansion in LiF Crystals by Neutron Irradiation
- Dislocations Observed in NaF Crystals. II. : Nucleation Sources on Cleavage Surfaces
- Effects of Proton Bombardmemt on CaF_2 Crystals
- RadiatiOllInducedOpticalAbSOrptiolILSillCrvstallilleuartZQFusedSilica
- Dislocation Networks Formed by Electrolysis in NaF Crystal
- Effects in the Proton Bombardment of NaF Crystals. : II. Depth Profile of Damage in Microhardness
- Effects in the Proton Bombardment of NaF Crystal. : I. Measurement of the Average Projected Range