Impurity Conduction in Cadmium Sulfide at Low Temperatures

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概要

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• Impurity conduction has been investigated in three types of cadmium sulfide crystals, that is, Cl-doped cadmium sulfide, undoped cadmium sulfide grown from the vapour phase, and undoped cadmium sulfide grown by the melt. The crystals of Cl-doped cadmium sulfide exhibit the characteristics of impurity conduction at low temperatures which are similar to those of n-type germanium and n-type silicon: A metallic impurity conduction occurs above the excess donor concentration of 2×10^<18>cm^<-3>. The concentration range between 4×10^<16>cm^<-3> and 2×10^<18>cm^<-3> is intermediate between metallic type and non-metallic one. A negative magnetoresistance effect is observed at the excess donor concentrations above 2×10^<18>cm^<-3> in the temperature range from 1.5°K to 4.2°K.

• 社団法人日本物理学会の論文
• 1968-09-15

著者

• Morigaki Kazuo

  The Institute For Solid State Physics The University Of Tokyo

• Toyotomi Seizo

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Net Charge of Electron-Hole Drops in Pure and Doped Ge
• Screening and Stark Effects Due to Impurities on Excitons in CdS
• Impurity Conduction in Cadmium Sulfide at Low Temperatures
• Modulated Photocurrent in Hydrogenated Amorphous Silicon

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