Net Charge of Electron-Hole Drops in Pure and Doped Ge

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概要

• 論文の詳細を見る

• A net charge of drops has been measured with a photocurrent method anda photoluminescence method at 1.5 K in pure and doped Ge. The sign of thenet charge obtained from the two methods is in agreement with each other. Thesign is negative in pure Ge (,V.,<10" cm ') and p-type Ge (V.=8 x 10" cm ').The sign is positive in o-type Ge (10" cm '<N.S2 x 10" cm-'), and the signcannot be obtained for V.g8x]0"cm-' and 7V.=5xl0"cm '. The signreversals are not observed under (Ill) uniaxial stress ($10' kg/cm').

• 社団法人日本物理学会の論文
• 1979-02-15

著者

• UGUMORI Tadaki

  Technical College, Yamaguchi University.

• Morigaki Kazuo

  The Institute For Solid State Physics The University Of Tokyo

• Ugumori Tadaki

  Technical College Yamaguchi University

• NAGASHIMA Chieko

  The Institute for Solid State Physics,University of Tokyo

• Nagashima Chieko

  The Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  The Institute For Solid State Physics University Of Tokyo

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