Electron Multiplication in Hard Flows of Selenium Rectifiers

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概要

• 論文の詳細を見る

• Noises generated in a selenium rectifier were measured at 600 kc for various reverse voltages and temperatures. They were analyzed by the method of F.E. Haworth and R.M. Bozorth, and attributed to electron multiplication in the barrier layer owing to very high fields in the layer. Because the barrier layer is composed of selenide of about 10^<-5> cm thickness, the internal field will be as high as 100 volt/cm at reverse voltages of the order of ten volts, thus creating impact ionization. The observed negative temperature coefficient of the avalanche noises will account for the abnormal temperature dependency of hard flows at high reverse voltages, since the latter may also be attributed to the electron multiplication. At higher temperatures and lower voltages, however, the noises seemed to be of the flicker type.

• 社団法人日本物理学会の論文
• 1952-10-25

著者

• Tomura Masao

  Institute Of Polytechnics Of Osaka City University

• ABIKO Yukiaki

  Institute of Polytechnics of Osaka City University

• Abiko Y.

  Institute of Polytechnics of Osaka City University

• Tomura M.

  Institute of Polytechnics of Osaka City University

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• Luminescences from KBr/KI Single Crystals
• Electronic Conductivities of Amorphous Solids at High Electric Fields
• Electron Multiplication in Hard Flows of Selenium Rectifiers
• The Magnetoeffect in Germanium Point Contacts
• Electrical Resistivity of Polycrystalline Selenium at Higher Fields
• Note on the Shift of Band Edge of Germanium with Temperature
• Electronic Mobilities in Diamond at High Electrostatic Fields
• Electron Multiplication in Hard Flows of Selenium Rectifiers

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