Galvanomagnetic Effect of TlBr

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概要

• 論文の詳細を見る

• Galvanomagnetic studies were performed for the photocarriers in TlBr with the transient method between 100 K and 1.8 K. The measurements of Hall effect indicate that the photoconduction is of two-carrier. The change of the sign of the Hall angle is observed as the temperature decreases. It is observed that at relatively high temperature (>20 K) the dominant contributor to the current is electrons, but at low temperature (<3.8 K) it is holes which have high Hall mobilities of more than 2×10^4 cm^2/volt sec. The angular dependence of magnetoconductivities at 1.8 K shows the almost spherical shape of the constant energy surface at the top of the valence band.

• 社団法人日本物理学会の論文
• 1972-05-05

著者

• KOBAYASHI Koichi

  The Institute for Solid State Physics,University of Tokyo

• Makita Yunosuke

  The Institute For Solid State Physics The University Of Tokyo:(present Address) Electrotechnical Lab

• Kobayashi Koichi

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Magneto-Optical Absorption in Thallous Iodide of CsCl Structure
• Edge Emissions and Broad Band Emissions in Thallous Hatides
• Galvanomagnetic Effect of TlBr
• Reflectivity Spectra of TICI-TIBr Mixed Crystals

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