Spiral Instabilities in Semiconductor Plasmas

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概要

• 論文の詳細を見る

• An experimental investigation was made of spiral instabilities in injected plasmas in a Corbino disk-shaped semiconductor subject to radial electric and axial magnetic fields. Observation of the spiral instabilities was made in p-type germanium at 77°K and in n-type germanium at room temperature. The oscillation frequecies are between O.5 and 1.6Mc/s and between 60 and 120 kc/s in p-type and n-type germanium respectively and depend on the externally applied electric and magnetic fields. It was also observed that there exist some critical ranges for the values of the electric and magnetic fields for which this kind of instabilities occur. A theoretical explanation for most of the experimental results is given.

• 社団法人日本物理学会の論文
• 1966-06-05

著者

• MIYAI Yukio

  Research Laboratory Matsushita Electronics Corporation

• NAKASHIMA Shinici

  Research Laboratory of Matsushita Electronics Corporation

• Miyai Y.

  Research Laboratory of Matsuhita Electronics Corporation

関連論文

• Microwave Oscillations from P-N Junction in Germanium
• Observation of Rotating Mode of an Instability in Semiconductor Plasmas
• Instabilities of Injected Plasmas in Germanium in the Presence of a Transverse Magnetic Field
• Theory of Spiral Instabilities in Semiconductor Plasmas in Transverse Magnetic Fields
• Admittance Measurements on Germanium Microwave-Oscillator Diodes
• Germanium Microwave-Oscillator Diodes
• Continuous Microwave Oscillation from Germanium Diodes
• Spiral Instabilities in Semiconductor Plasmas

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