Electrical Properties of Sb-As Alloys

概要

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Electrical resistivity of single crystals of Sb-As alloys has been measured in the temperature range from 4.2°to 310°K, and Hall coefficient and magnetoresistive ratio have been measured as functions of As concentration at 77° and 300°K. The resistivity vs. reciprocal temperature curves indicate a certain thermal activation of conduction carriers between 270°and 310°K in the alloys with 9 to 40 atomic percent As. The activation energy thus determined shows a maximum value of 126 meV at nearly 30%As. The results are analysed in terms of the two carrier conduction model within the Boltzmann approximation. It is emphasized that Sb-As alloys with 9 to 40% As are slightly degenerated semiconductors with a small thermal energy gap, while others are semimetals. These results are consistent with predictions from experiments on the de Haas van Alphen effct in Sb alloys containing small amounts of As.
社団法人日本物理学会の論文
1966-06-05