Three-Band Model for the Galvanomagnetic Effects in Bismuth

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概要

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• A model of three-band conduction is proposed to explain the magnetic-field dependence of Hall coefficient and the deviation from the H^2-dependece of magnetoresistance, which are observed in high purity bismuth at temperatures above the liquid hydrogen temperature. The present model takes into account the effect of thermally-excited light holes as the 3rd carrier. In the model of two-band conduction so far assumed, the field dependence of the galvanomangetic effects in pure bismuth has been interpreted in terms of the unequal number of electrons and holes, while, in the present model, the Hall coefficient is expected to have the magnetic-field dependence even in a perfectly pure bismuth in which the number of electrons and holes is equal.

• 社団法人日本物理学会の論文
• 1965-04-05

著者

• Morimoto Takeshi

  Engineering Research Institute Kyoto University

関連論文

• Heavy Electrons in Tellurium-Doped Bismuth
• Three-Fold Symmetry of Magnetoresistance in Tin-Dnoped Bismuth
• Galvanomagnetic Effects and Magnetic Susceptibility of Tin-Doped Bismuth Crystals
• Magnetosonic-Electric Effect in Bismuth
• Three-Band Model for the Galvanomagnetic Effects in Bismuth
• Negative Resistance and Instabilities of Bismuth Crystals in a Magnetic Field
• Light and Heavy Holes in Conduction of Tin-Doped Bismuth
• Self Induction of Mobile Plasma in Bismuth

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