Hall Mobility of Photoelectrons in CdS

概要

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Recently, Sawamoto^<1)> has observed the cyclotron resonance of photocarriers in CdS at 1.7°K. If one takes ωτ of about unity in his measurement, one would expect the electron mobility being of the order of 10^4 cm^2/volt sec, while such a high magnitude has not been obtained in the temperature region of liquid helium^<2),3)>. We will report here our recent measurement on Hall mobility of photoelectrons in CdS. Tbe mobility observed was as high as 1x1O^4 cm^2/volt sec at 5°K. The method of measurement is based upon the Redfield principle^<4)> modified by using pulse technique^<5)>. It is a transient method and an establishment of a steady state Hall field through transverse charge displacement inside a crystal is not required. Two plane parallel electrodes are blocked from a crystal to prevent charge flow between them and no problem on electrode contact is necessary to be considered. The crystal was a high resistvity CdS supplied by Onuki at Matsushita Research Institute Tokyo^<6)>. Photocarriers were produced by 1μs light pulse, wavelength of which was longer than the fundamental absorption tail. After each illumination, the crystal was depolarized by a light throgh a 660mμ cut-of filter to release trapped photocarriers. The sign of Hall effect was due to negative carriers in the entire range of temperature.
社団法人日本物理学会の論文
1964-01-05