Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and Germanium
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概要
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The relaxation times for electrons in germanium and silicon were measured from the half-width of the cyclotron resonance line at 6 mm wavelength over the temperature range from 1.6°to 20°K for the specimens of diffelent impurity concentration. Above 3°K the reciprocal relaxation times for electrons in high purity specimens are 1/τo=3.6x10^8 T^3/^2sec^<-1> for germanium and 1/τo=2.6x10^8 T^3/^2sec^<-1> for silicon, respecitively. These results show that the acoustical lattice scattering is predominant in this region. For impure specimens, deviation from the T^3/^2-dependence was observed at low temperatures. This deviation is due to neutral impurity scattering. The applicability of Erginsoy's formula for neutlral impurity scattering was examined. It was found that the conventional Erginsoy,s formula corrected for chemical shift agrees fairly well with the experimental results.
- 社団法人日本物理学会の論文
- 1964-01-05
著者
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Kawamura Hajimu
Institute For Solid State Physics University Of Tokyo
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Fukai Masakazu
Institute for Solid State Physics, University of Tokyo
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FUKAI Masakazu
Matsushita Central Research Institute
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SEKID0 Kenji
Institute for Solid State Physics, University of Tokyo
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IMAI Isamu
Institute for Solid State Physics, University of Tokyo
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Imai Isamu
Department Of Pure And Applied Science College Of General Education University Of Tokyo
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Imai Isamu
Institute For Solid State Physics University Of Tokyo
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Sekid0 Kenji
Institute For Solid State Physics University Of Tokyo
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Fukai Masakazu
Institute For Solid State Physics University Of Tokyo
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Fukai M.
Institute for Solid State Physics, University of Tokyo
関連論文
- Hot Electron Effect in Cyclotron Resonance of Germanium
- Cyclotron Resonance of Hot Electrons in Germanium
- Cyclotron Resonance Line-Broadening due to Ionized Impurity Scattering in Germanium
- A Study of Interband Scattering of Holes in Germanium
- Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium
- Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and Germanium
- Measurements of Relaxation Time in Germanium by the Cyclotron Resonance
- Determination of Dislocation Densities Through Nuclear Resonance Studies
- Preliminary Study of the Exciton Absorption Spectrum of PbI_2
- Measurement of the Relaxation Time for Electrons in Silicon by Cyclotron Resonance
- Linewidth of Cyclotron Resonance of Pure Germanium