Measurement of the Relaxation Time for Electrons in Silicon by Cyclotron Resonance
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1963-02-05
著者
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KAWAMURA Hazimu
Institute for Solid State Physics, University of Tokyo
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Fukai Masakazu
Institute for Solid State Physics, University of Tokyo
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SEKIDO Kenji
Institute for Solid State Physics, University of Tokyo
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Sekido Kenji
Institute For Solid State Physics University Of Tokyo
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Imai Isamu
Institute For Solid State Physics University Of Tokyo
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Fukai Masakazu
Institute For Solid State Physics University Of Tokyo
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Kawamura Hazimu
Institute For Solid State Physics University Of Tokyo
関連論文
- Cyclotron Resonance of Germanium-Silicon Alloys
- Hot Electron Effect in Cyclotron Resonance of Germanium
- Cyclotron Resonance of Hot Electrons in Germanium
- Cyclotron Resonance Line-Broadening due to Ionized Impurity Scattering in Germanium
- Cyclotron Resonance Line Broadening due to Carrier-Carrier Interaction in Germanium
- Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and Germanium
- Measurements of Relaxation Time in Germanium by the Cyclotron Resonance
- Preliminary Study of the Exciton Absorption Spectrum of PbI_2
- Measurement of the Relaxation Time for Electrons in Silicon by Cyclotron Resonance
- Linewidth of Cyclotron Resonance of Pure Germanium
- The Quadrupolar Effect in Alkali Halide Mixed Crystals
- 21C-2 INVESTIGATIONS OF DISLOCATIONS IN ALKALI HALIDES THROUGH NUCLEAR MAGNETIC RESONANCE
- 21C-3 TRAPPING OF PHOTOELECTRONS BY DISLOCATION LINES IN ALKALI-HALIDE