Ti, Zr または V の極微量添加による純銅の再結晶促進現象(一次再結晶と集合組織)(<特集>再結晶・粒成長)

概要

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The present authors previously reported that recrystallization of commercially available pure copper (oxygen free copper) was accelerated by the trace addition of Ti, Zr, Hf, V, Cr, Mn, or Fe. This study was undertaken to elucidate this phenomenon more clearly. Three sorts of pure coppers including the above and coppers with the trace addition of Ti, Zr or V up to about 50 mol ppm, etc. were used as specimens. Hardness and electrical resistivity measurements, structural observations, etc. were made mainly for coldworked or finally annealed specimens. The results of electrical resistivity measurements suggested that the additives should interact with a certain impurity in commercial pure copper. The recrystallization temperature of specially prepared pure copper with a sulfur impurity below 1 mol ppm extremely decreased, i. e. to a value of about 370K. A small number of dispersed fine particles were observed in the specimens containing the additives and a certain amount of sulfur. Based on the result of EDS analysis, they were a sulfide of additives. Therefore, the phenomenon was attributed to the fact that the amount of sulfur impurity dissolved in commercial pure copper was reduced by the trace addition of Ti, Zr or V.
社団法人日本鉄鋼協会の論文
1984-11-01