On the Preparation of Silicontetraiodide, its Some Thermodynamic Properties and Some Experiments on the Crystal Growth of Silicon by the Disproportionate Reaction of Silicondiiodide

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概要

• 論文の詳細を見る

• In carring out the vapor deposition of silicon on seed crystals in closed tubes and in open tubes using iodine as carrier gas, the most important reactions are, (1) Si+2I_2→SiI_4 (G) (2) SiI_4⇄SiI_2 (G)+I_2 (3) Si+SiI_4⇄2SiI_2 About these reactions, reaction temperature and equilibrium constants were measured and from the measured value, ΔF°, ΔH° and ΔS° were calculated. Further using above reactions, some simple experiments on the vapor deposition of silicon were carried out.

• 山梨大学の論文
• 1967-12-20

著者

• Kunugi Toshio

  山梨大学工学部

• Uchimura Kotaro

  山梨大学工学部

• Yuizumi Masaki

  山梨大学工学部

• Takuma Takashi

  山梨大学工学部

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• Study on the crystal growth of GaAs from vapor phase pt. 1 : Study on the system of Arsenic and iodine
• On the Preparation of Silicontetraiodide, its Some Thermodynamic Properties and Some Experiments on the Crystal Growth of Silicon by the Disproportionate Reaction of Silicondiiodide
• Study on the system of Titanium and Bromine
• Study on the system of Titanium and Iodine

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