RF 反応性スパッタ法によるシリコン窒化膜

概要

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Silicon nitride films (from 400A to 3700A in thickness) have been prepared on glass substrates by RF reactive sputtering of a silicon cathode in N_2 gas or Ar-N_2 gas mixtures. Gas pressure was in the range of 1∿8×(10)^<-3> Torr. Physical properties of silicon nitride films were examined in reference to the sputtering parameters. Dielectric constant of silicon nitride films, which was in the range from 2.6 to 7.4,increased with the rate of deposition. Dielectric strength of films was in the range of 4.2∿6.3×(10)^6V/cm. Optical band gap of films was about 4.7eV. Film resistivities achieved was in the range of (10)^<13>∿(10)^<14>Ω・cm.